1/9 n low power consumption n wide common-mode (up to v cc + ) and differential voltage range n low input bias and offset current n output short-circuit protection n high input impedance jfet input stage n internal frequency compensation n latch up free operation n high slew rate : 16v/ m s (typ) description the lf353 are high speed jfet input dual oper- ational amplifiers incorporating well matched, high voltage jfet and bipolar transistors in a mono- lithic integrated circuit. the devices feature high slew rates, low input bias and offset currents, and low offset voltage temper- ature coefficient. order code n= dual in line package (dip) d= small outline package (so) - also available in tape & reel (dt) pin connections (top view) part number temperature range package nd lf353 0 c, +70 c ?? lf253 -40 c, +105 c ?? lf153 -55 c, +125 c ?? n dip8 (plastic package) d so8 (plastic micropackage) 1 2 3 45 6 7 8 - + - + 1 - output1 2 - inverting input 1 3 - non-inverting input 1 4-v cc - 5 - non-invertig input 2 6 - inverting input 2 7 - output 2 8-v cc + lf153 lf253 - lf353 wide bandwidth dual j-fet operational amplifiers march 2001
lf153 - lf253 - lf353 2/9 schematic diagram (each amplifier) absolute maximum ratings symbol parameter lf153 lf253 lf353 unit v cc supply voltage - note 1) 1. all voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero refere nce level is the midpoint between v cc + and v cc - . 18 v v i input voltage - note 2) 2. the magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 15 v v id differential input voltage - note 3) 3. differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 30 v p tot power dissipation 680 mw output short-circuit duration - note 4) 4. the output may be shorted to ground or to either supply. temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded infinite t oper operating free-air temperature range -55 to +125 -40 to +105 0 to +70 c t stg storage temperature range -65 to +150 c
lf153 - lf253 - lf353 3/9 electrical characteristics v cc = 15v, t amb = +25 c (unless otherwise specified) symbol parameter min. typ. max. unit v io input offset voltage (r s = 10k w ) t amb = +25 c t min t amb t max 310 13 mv dv io input offset voltage drift 10 m v/ c i io input offset current- note 1) t amb = +25 c t min t amb t max 1. the input bias currents are junction leakage currents which approximately double for every 10 c increase in the junction temperature. 5100 4 pa na i ib input bias current -note 1 t amb = +25 c t min t amb t max 20 200 20 na a vd large signal voltage gain ( r l =2k w ,v o = 10v) t amb = +25 c t min t amb t max 50 25 200 v/mv svr supply voltage rejection ratio (r s = 10k w) t amb = +25 c t min t amb t max 80 80 86 db i cc supply current, no load t amb = +25 c t min t amb t max 1.4 3.2 3.2 ma v icm input common mode voltage range 11 +15 -12 v cmr common mode rejection ratio (r s = 10k w) t amb = +25 c t min t amb t max 70 70 86 db i os output short-circuit current t amb = +25 c t min t amb t max 10 10 40 60 60 ma v opp output voltage swing t amb = +25 cr l =2k w r l = 10k w t min t amb t max r l =2k w r l = 10k w 10 12 10 12 12 13.5 v sr slew rate v i = 10v, r l =2k w ,c l = 100pf, t amb = +25 c, unity gain 12 16 v/ m s t r rise time v i = 20mv, r l =2k w ,c l = 100pf, t amb = +25 c, unity gain 0.1 m s k ov overshoot v i = 20mv, r l =2k w ,c l = 100pf, t amb = +25 c, unity gain 10 % gbp gain bandwidth product f = 100khz, t amb = +25 c,v in = 10mv, r l =2k w ,c l = 100pf 2.5 4 mhz r i input resistance 10 12 w thd total harmonic distortion ( f = 1khz, a v = 20db r l =2k w, c l = 100pf, t amb = +25 c,v o =2v pp ) 0.01 e n equivalent input noise voltage r s = 100 w, f = 1khz 15 ? m phase margin 45 degrees v o1 /v o2 channel separation (av = 100, t amb = +25 c) 120 db nv hz ----------- -
lf153 - lf253 - lf353 4/9 maximum peak-to-peak output voltage versus frequency maximum peak-to-peak output voltage versus frequency maximum peak-to-peak output voltage versus load resistance maximum peak-to-peak output voltage versus frequency maximum peak-to-peak output voltage versus free air temp. maximum peak-to-peak output voltage versus suply voltage
lf153 - lf253 - lf353 5/9 input bias current versus free air temperature large signal differential voltage amplification and phase shift versus frequency supply current per amplifier versus free air temperature large signal differential voltage amplification versus free air temp. total power dissipation versus free air temperature supply current per amplifier versus supply voltage
lf153 - lf253 - lf353 6/9 common mode rejection ratio versus free air temperature output voltage versus elapsed time voltage follower large signal pulse response equivalent input noise voltage versus frequency total harmonic distortion versus frequency
lf153 - lf253 - lf353 7/9 parameter measurement information figure 1 : voltage follower figure 2 : gain-of-10 inverting amplifier typical application quadruple oscillator
lf153 - lf253 - lf353 8/9 package mechanical data 8 pins - plastic dip dim. millimeters inches min. typ. max. min. typ. max. a 3.32 0.131 a1 0.51 0.020 b 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 d 10.92 0.430 e 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 f 6.6 0260 i 5.08 0.200 l 3.18 3.81 0.125 0.150 z 1.52 0.060
lf153 - lf253 - lf353 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent right s of stmicroelectronics. specifications mentioned in this publicat ion are subject to change without notice. this pub lication supersedes and replaces all information previously suppl ied. stmicroelectronics products are not authorized for use as critical components in life suppo rt devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all righ ts reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom ? http://www .st.com package mechanical data 8 pins - plastic micropackage (so) dim. millimeters inches min. typ. max. min. typ. max. a 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.020 c1 45 (typ.) d 4.8 5.0 0.189 0.197 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.150 0.157 l 0.4 1.27 0.016 0.050 m 0.6 0.024 s8 (max.)
|
